How ripples turn into dots: Modeling ion-beam erosion under oblique incidenceS. Vogel and S. J. Linz
Institut für Theoretische Physik, Universität Münster - Wilhelm-Klemm-Str. 9 48149 Münster, Germany
received 8 May 2006; accepted in final form 2 October 2006
published online 25 October 2006
Pattern formation on semiconductor surfaces induced by low energetic ion-beam erosion under normal and oblique incidence is theoretically investigated using a continuum model in form of a stochastic, nonlocal, anisotropic Kuramoto-Sivashinsky equation. Depending on the size of the parameters, this model exhibits hexagonally ordered dot, ripple, less regular and even rather smooth patterns. We investigate the transitional behavior between such states and suggest how transitions can be experimentally detected.
68.55.Jk - Thin film structure and morphology: Structure and morphology; thickness; crystalline orientation and texture.
79.20.-m - Impact phenomena (including electron spectra and sputtering).
02.60.Lj - Ordinary and partial differential equations; boundary value problems.
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