Volume 81, Number 3, February 2008
Article Number 38001
Number of page(s) 6
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 21 December 2007
EPL, 81 (2008) 38001
DOI: 10.1209/0295-5075/81/38001

Well-aligned ZnO nanorods for device applications: Synthesis and characterisation of ZnO nanorods and n-ZnO/p-Si heterojunction diodes

N. Koteeswara Reddy, Q. Ahsanulhaq, J. H. Kim and Y. B. Hahn

School of Semiconductor and Chemical Engineering, BK 21 Center for Future Energy Materials and Devices, Chonbuk National University - Jeonju - 561 756, South Korea

received 6 October 2007; accepted in final form 26 November 2007; published February 2008
published online 21 December 2007

Well-aligned, low-resistive zinc oxide (ZnO) nanorods were grown on ZnO-coated glass and p-Si substrates using a simple and economic solution method. The device performance of ZnO nanorods has been investigated by studying their p-n junction diode behaviour at room temperature. The as-grown n-ZnO/p-Si diode exhibited a low turn-on voltage and saturation current of ~ 2.25 V and ~ 1.27 $\mu$A, respectively, with a diode quality factor of 1.9. These investigations reveal that the well-aligned ZnO nanorod structures can be used as an active layer in the fabrication of efficient optoelectronic nano-devices.

81.07.-b - Nanoscale materials and structures: fabrication and characterization.
81.16.Be - Chemical synthesis methods.
73.63.-b - Electronic transport in nanoscale materials and structures.

© EPLA 2008