Enhanced THz frequency multiplier efficiency by quasi-ballistic electron reflection in double-heterojunction structuresD. S. Ong1, 2 and H. L. Hartnagel1
1 Institut für Hochfrequenztechnik, Technische Universität Darmstadt - Merckstr. 25, D-64283 Darmstadt, Germany
2 Faculty of Engineering, Multimedia University, Persiaran Multimedia - 63100 Cyberjaya, Selangor, Malaysia
received 18 September 2007; accepted in final form 14 December 2007; published February 2008
published online 18 January 2008
A self-consistent ensemble Monte Carlo model is used to demonstrate the enhancement of frequency multiplication efficiency by quasi-ballistic electron reflection (Q-BER) in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructures. Simulation results showed that the strong nonlinearity due to this familiar mechanism is able to produce the third harmonic of the current response at almost half of the amplitude of the fundamental at excitation frequencies between 50 and 250 GHz. It is found that the proposed structure is more efficient for frequency multiplication with a thinner well, where the Q-BER phenomenon is more profound.
84.40.-x - Radiowave and microwave (including millimeter wave) technology.
85.30.De - Semiconductor-device characterization, design, and modeling.
73.23.Ad - Ballistic transport.
© EPLA 2008