Volume 82, Number 1, April 2008
Article Number 18002
Number of page(s) 5
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 12 March 2008
EPL, 82 (2008) 18002
DOI: 10.1209/0295-5075/82/18002

Threading dislocations related persistent photoconductivity effect in hydride vapor phase epitaxy grown GaN epilayers

Kai Qiu, X. H. Li, Z. J. Yin, X. C. Cao, Q. F. Han, C. H. Duan, X. J. Zhou, M. Liu, T. F. Shi, X. D. Luo and Y. Q. Wang

Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Science Hefei 230031, PRC

received 2 November 2007; accepted in final form 7 February 2008; published April 2008
published online 12 March 2008

Deep-level defect-related properties of as-grown and annealed GaN epilayers grown by hydride vapor phase epitaxy (HVPE) are investigated using persistent photoconductivity (PPC) and photoluminescence (PL) measurements. PPC phenomena are seen in these HVPE-GaN epilayers which do not contain the yellow-luminescence (YL) band, suggesting that PPC and YL phenomena are not related. The PPC decay kinetics indicates that the characteristic of the defects which are responsible for the PPC phenomenon would be different from the point defects. The structural qualities of these HVPE-GaN epilayers were characterized by X-ray diffraction. As the densities of threading dislocations decrease, a decrease of photocurrent was clearly observed. The results suggest that the negatively charged threading dislocations are the candidate for PPC effect in our HVPE-GaN epilayers.

81.05.Ea - III-V semiconductors.
81.15.Hi - Molecular, atomic, ion, and chemical beam epitaxy.
81.70.Fy - Nondestructive testing: optical methods.

© EPLA 2008