Synthesis of -Al2O3 thin films using reactive high-power impulse magnetron sputteringE. Wallin1, T. I. Selinder2, M. Elfwing2 and U. Helmersson1
1 Plasma Coatings Physics Division, IFM Material Physics, Linköping University - SE-581 83 Linköping, Sweden, EU
2 Sandvik Tooling AB - SE-126 80 Stockholm, Sweden, EU
received 18 February 2008; accepted in final form 12 March 2008; published May 2008
published online 23 April 2008
-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low as 650 C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an ArO2 gas mixture. The coatings consisted of plate-like crystallites, as revealed by scanning electron microscopy. phase growth was retained over the studied range of substrate bias voltages (from floating potential up to -100V), with films exhibiting a slightly denser microstructure at higher bias voltages. X-ray diffraction indicated that the -alumina grains had a preferred orientation of (0001)-planes perpendicular to the substrate surface. X-ray analysis of films deposited at 575 C indicated the presence of -alumina, whereas films grown at 500 C or lower were X-ray amorphous.
68.55.-a - Thin film structure and morphology.
81.15.Cd - Deposition by sputtering.
81.05.Je - Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides).
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