Diffuse X-ray scattering from graded SiGe/Si layersS. Danis1, V. Holý1, J. Stangl2 and G. Bauer2
1 Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics Ke Karlovu 5, 121 16 Prague, Czech Republic, EU
2 Institute of Semiconductor Physics, Kepler University - Altenbergerstr. 69, A-4040 Linz, Austria, EU
received 12 March 2008; accepted in final form 29 April 2008; published June 2008
published online 4 June 2008
We present a method for the determination of the density profile of misfit dislocations in graded SiGe layers based on high-resolution X-ray diffraction and simulation of diffuse X-ray scattering from misfit dislocations. From the density profile of misfit dislocations both the profile of local plastic relaxation and the profile of the Ge content were determined; the latter compares very well with the results of depth-resolved secondary-ion mass analysis.
61.05.cm - X-ray reflectometry (surfaces, interfaces, films).
61.72.Lk - Linear defects: dislocations, disclination.
68.55.-a - Thin film structure and morphology.
© EPLA 2008