Volume 83, Number 3, August 2008
Article Number 38001
Number of page(s) 6
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 16 July 2008
EPL, 83 (2008) 38001
DOI: 10.1209/0295-5075/83/38001

Spin inversion devices operating at Fano anti-resonances

J. L. Cardoso and P. Pereyra

Física Teórica y Materia Condensada UAM-Azcapotzalco - Avenida San Pablo 180, Código Postal 02200 México Distrito Federal, México

received 16 April 2008; accepted in final form 9 June 2008; published August 2008
published online 16 July 2008

Using the exact two-propagating-modes solutions for electrons in a quasi-2D semiconductor wave guide under sectionally constant magnetic fields and spin-orbit interactions, it is explicitly shown that the Fano-like resonances and antiresonances lead to sudden suppressions and enhancements of the spin-dependent transmission probabilities. Our calculations show that when the magnetic-field-tilting angle $\theta _{H}$ is increased, the spin-field interaction becomes the most significant mechanism for the spin transitions in magnetic superlattices. Taking advantage of these spin-transport effects, simple and efficient spin-inverter devices are proposed. To better visualize the relative influence of the specific semiconductor properties on the device performance and device characteristics, we consider two magnetic superlattices based on semiconductors having entirely different Landè g-factor: GaAs and InSb. Although slightly more efficient spin-inversion devices are obtained for the GaAs semiconductor, InSb requires lower magnetic fields and its efficiency can be close to 80%.

85.75.-d - Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields.
72.25.Dc - Spin polarized transport in semiconductors.
85.35.Ds - Quantum interference devices.

© EPLA 2008