Observation of an inverted band structure near the surface of InNL. Colakerol1, L. F. J. Piper1, A. Fedorov2, T. C. Chen3, T. D. Moustakas3 and K. E. Smith1
1 Department of Physics, Boston University - Boston, MA 02215, USA
2 Advanced Light Source, Lawrence Berkeley National Laboratory - Berkeley, CA, USA
3 Department of Electrical and Computer Engineering, Boston University - Boston, MA 02215, USA
received 30 April 2008; accepted in final form 23 June 2008; published August 2008
published online 29 July 2008
The dispersion of the valence band within the electron accumulation layer of n-type InN has been directly measured using angle-resolved photoemission spectroscopy. Intermixing between the heavy-hole and light-hole valence bands in the intrinsic quantum well potential associated with the near-surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Such an inverted band structure has not previously been observed in an intrinsic accumulation layer.
79.60.Bm - Clean metal, semiconductor, and insulator surfaces.
73.20.At - Surface states, band structure, electron density of states.
71.20.Nr - Semiconductor compounds.
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