Investigation of 74As decay branching ratio dependence on the host materialGy. Gyürky1, J. Farkas1, C. Yalçin1, 2, G. G. Kiss1, Z. Elekes1, Zs. Fülöp1 and E. Somorjai1
1 Institute of Nuclear Research (ATOMKI) - H-4001 Debrecen, POB 51, Hungary, EU
2 Kocaeli University, Department of Physics - TR-41380 Umuttepe, Kocaeli, Turkey
received 23 April 2008; accepted in final form 25 June 2008; published August 2008
published online 5 August 2008
The branching ratio between the and decay of 74As has been measured in different host materials such as Ta, Al, Ge and mylar. No significant dependence of the branching ratio on the host material has been observed. The half-life of 74As has also been measured in metallic Ta and in semiconductor Ge, no difference has been found and the results are in agreement with the literature value. The obtained results provide an upper limit for the possible host material dependence of the decay rate in 74As.
21.10.Tg - Lifetimes, widths.
23.40.-s - decay; double decay; electron and muon capture.
27.50.+e - 59 A 89.
© EPLA 2008