Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatmentW.-C. Tsai1, S.-J. Wang1, C.-L. Chang1, C.-H. Chen2, R.-M. Ko1 and B.-W. Liou3
1 Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University Tainan, 70101, Taiwan, Republic of China
2 Taiwan Semiconductor Manufacturing Company Ltd (TSMC) - Hsinchu 300, Taiwan, Republic of China
3 Department of Electronic Engineering, Wu-Feng Institute of Technology - Chiayi 62153, Taiwan, Republic of China
received 1 May 2008; accepted in final form 12 August 2008; published October 2008
published online 18 September 2008
The use of hydrogen plasma (H-plasma) treatment to improve field emission (FE) characteristics of self-synthesized tungsten oxide nanowires (TONWs) is reported. With a H-plasma treatment under a working power of 200 W and a pressure of 500 mtorr for 20 s, improved FE characteristics with a turn-on field (4.7 V/m at 10 A/cm2) lower than those of the as-grown case by 23% and a reduction in the effective emission barrier of 0.72 eV were obtained, which is attributed to the reduction in oxygen adsorption, decrease in the wire length and density, and transition of TONWs surfaces from well crystalline into the amorphous phase.
61.46.Km - Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires).
© EPLA 2008