Issue
EPL
Volume 84, Number 6, December 2008
Article Number 60002
Number of page(s) 6
Section General
DOI http://dx.doi.org/10.1209/0295-5075/84/60002
Published online 23 December 2008
EPL, 84 (2008) 60002
DOI: 10.1209/0295-5075/84/60002

Generation of THz radiation in semiconductors with cyclotron heating of heavy holes

V. A. Kukushkin

Institute of Applied Physics of the Russian Academy of Science - 46 Ulyanov st., 603950 Nizhny Novgorod, Russia

vakuk@appl.sci-nnov.ru

received 19 September 2008; accepted in final form 7 November 2008; published December 2008
published online 23 December 2008

Abstract
A method of THz radiation generation in semiconductors in crossed static magnetic and alternating electric fields is considered. It is based on the inversion of the transition between heavy- and light-hole sub-bands in the THz spectral range. This inversion is created due to cyclotron frequencies of heavy and light holes being different. Under sufficiently low hole density when the hole-hole energy exchange is less efficient than the hole-lattice one, this fact leads to a situation when the resonant with heavy holes pump alternating electric field heats only the heavy-hole population thereby inverting the heavy-light holes transition in a narrow spectral range. The optimal parameters of such a scheme were found and it was shown that it can operate even at room temperature (in the pulsed mode).

PACS
07.57.Hm - Infrared, submillimeter wave, microwave, and radiowave sources.
42.55.Px - Semiconductor lasers; laser diodes.
76.40.+b - Diamagnetic and cyclotron resonances.

© EPLA 2008