Volume 85, Number 1, January 2009
Article Number 18002
Number of page(s) 6
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 12 January 2009
EPL, 85 (2009) 18002
DOI: 10.1209/0295-5075/85/18002

Multi quantum well structures in deep blue organic light-emitting diode

S. K. Saha1, Y. K. Su2 and W. L. Lin2

1   Department of Materials Science, Indian Association for the Cultivation of Science Jadavpur, Kolkata 700032, India
2   Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University 1, University Road, Tainan 701, Taiwan, ROC

received 29 September 2008; accepted in final form 21 November 2008; published January 2009
published online 12 January 2009

Multi quantum well structures in the deep blue emitted system 2-methyl-9,10-di(1-napthyl)anthracene ($\alpha$, $\alpha$-MADN) are fabricated. The device structures are optimized with respect to the layer thickness and number of pairs forming the quantum wells. The Electroluminescence spectra are de-convoluted into 3 peaks with peak positions 432 nm, 458 nm and 500 nm, which are believed to arise due to the recombination of electrons and holes in the MADN, MADN/NPB interface and Alq3, respectively. It is observed that a better confinement of excitonic charges in different layers causes the efficiency to enhance by more than 25% using optimized thickness parameters and 2 pairs of quantum well structures.

85.60.Jb - Light-emitting devices.

© EPLA 2009