Volume 85, Number 5, March 2009
Article Number 57009
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 20 March 2009
EPL, 85 (2009) 57009
DOI: 10.1209/0295-5075/85/57009

Valence bond dynamical mean-field theory of doped Mott insulators with nodal/antinodal differentiation

M. Ferrero1, P. S. Cornaglia1, 2, L. De Leo1, O. Parcollet3, G. Kotliar4 and A. Georges1

1   Centre de Physique Théorique, CNRS, Ecole Polytechnique - 91128 Palaiseau Cedex, France, EU
2   Centro Atómico Bariloche and Instituto Balseiro, CNEA, CONICET - 8400 Bariloche, Argentina
3   Institut de Physique Théorique, CEA, IPhT, CNRS, URA 2306 - 91191 Gif-sur-Yvette, France, EU
4   Physics Department and Center for Materials Theory, Rutgers University - Piscataway, NJ 08854, USA

received 4 November 2008; accepted in final form 17 February 2009; published March 2009
published online 20 March 2009

We introduce a valence bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. This is described in terms of an orbital-selective transition in reciprocal space. The calculated tunneling and photoemission spectra are consistent with the phenomenology of the normal state of cuprates. We derive a low-energy description of these effects using a generalization of the slave-boson method.

71.27.+a - Strongly correlated electron systems; heavy fermions.
71.30.+h - Metal-insulator transitions and other electronic transitions.
74.72.-h - Cuprate superconductors (high-Tc and insulating parent compounds).

© EPLA 2009