Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodesF. J. Teran1, M. D. Martín1, J. M. Calleja1, L. Viña1, L. Eaves2 and M. Henini2
1 Departamento de Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid 28049 Madrid Spain, EU
2 School of Physics and Astronomy, University of Nottingham - NG7 2RD Nottingham, UK, EU
received 17 December 2008; accepted in final form 6 March 2009; published March 2009
published online 7 April 2009
We investigate the dynamics of excitons created in a quantum well embedded in a double-barrier resonant-tunneling diode under applied bias. We find that the exciton dynamics is highly correlated with carrier tunneling processes. The tunneling favors exciton relaxation via exciton-carrier scattering processes.
71.35.-y - Excitons and related phenomena.
73.40.Gk - Tunneling.
78.47.Cd - Time resolved luminescence.
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