Issue
EPL
Volume 85, Number 6, March 2009
Article Number 67010
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI http://dx.doi.org/10.1209/0295-5075/85/67010
Published online 07 April 2009
EPL, 85 (2009) 67010
DOI: 10.1209/0295-5075/85/67010

Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes

F. J. Teran1, M. D. Martín1, J. M. Calleja1, L. Viña1, L. Eaves2 and M. Henini2

1   Departamento de Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid 28049 Madrid Spain, EU
2   School of Physics and Astronomy, University of Nottingham - NG7 2RD Nottingham, UK, EU


received 17 December 2008; accepted in final form 6 March 2009; published March 2009
published online 7 April 2009

Abstract
We investigate the dynamics of excitons created in a quantum well embedded in a double-barrier resonant-tunneling diode under applied bias. We find that the exciton dynamics is highly correlated with carrier tunneling processes. The tunneling favors exciton relaxation via exciton-carrier scattering processes.

PACS
71.35.-y - Excitons and related phenomena.
73.40.Gk - Tunneling.
78.47.Cd - Time resolved luminescence.

© EPLA 2009