Volume 86, Number 2, April 2009
Article Number 28006
Number of page(s) 6
Section Interdisciplinary Physics and Related Areas of Science and Technology
Published online 06 May 2009
EPL, 86 (2009) 28006
DOI: 10.1209/0295-5075/86/28006

Growth of Co nanolines on self-assembled Si nanostripes

H. Sahaf, C. Léandri, E. Moyen, M. Macé, L. Masson and M. Hanbücken

CINaM-CNRS UPR 3118, Aix-Marseille Université, Campus de Luminy - Case 913, 13288 Marseille Cedex 9, France, EU

received 4 December 2008; accepted in final form 30 March 2009; published April 2009
published online 6 May 2009

One-dimensional Si nanostructures, grown on a Ag(110) substrate, have been used as a template to grow Co nanolines. Before Co deposition, the self-assembled Si nanostripes were characterized by high-resolution scanning tunneling microscopy. From this, an original atomic arrangement of silicon adatoms forming nanostripes can be proposed. The early stages of the Co deposition at room temperature on the Si nanostripes have then been studied by scanning tunneling microscopy, enabling the localization of adsorbed Co atoms. We show that Co is adsorbed on top of the Si nanostripes forming nanolines. No Co adsorption was detected on the pure Ag-surface in between the stripes. The preparation of an interesting one-dimensional Co-Si nanosystem is demonstrated.

81.16.Rf - Nanoscale pattern formation.
81.16.Dn - Self-assembly.
68.37.Ef - Scanning tunneling microscopy (including chemistry induced with STM).

© EPLA 2009