Issue
EPL
Volume 86, Number 6, June 2009
Article Number 67006
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI http://dx.doi.org/10.1209/0295-5075/86/67006
Published online 10 July 2009
EPL, 86 (2009) 67006
DOI: 10.1209/0295-5075/86/67006

Thermal dependence of the zero-bias conductance through a nanostructure

A. C. Seridonio1, 2, M. Yoshida3 and L. N. Oliveira1

1   Departamento de Física e Informática, Instituto de Física de São Carlos, Universidade de São Paulo 369, São Carlos, SP, Brazil
2   ICCMP - International Center for Condensed Matter Physics, Universidade de Brasília - 04513, Brasília, DF, Brazil
3   Departamento de Física, Instituto de Geociências e Ciências Exatas, Universidade Estadual Paulista 13500, Rio Claro, SP, Brazil

luizno@usp.br

received 20 February 2009; accepted in final form 2 June 2009; published June 2009
published online 10 July 2009

Abstract
We show that the conductance of a quantum wire side-coupled to a quantum dot, with a gate potential favoring the formation of a dot magnetic moment, is a universal function of the temperature. Universality prevails even if the currents through the dot and the wire interfere. We apply this result to the experimental data of Sato et al. (Phys. Rev. Lett., 95 (2005) 066801).

PACS
73.23.-b - Electronic transport in mesoscopic systems.
73.21.La - Quantum dots.
72.15.Qm - Scattering mechanisms and Kondo effect.

© EPLA 2009