Issue
EPL
Volume 87, Number 1, July 2009
Article Number 17009
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI http://dx.doi.org/10.1209/0295-5075/87/17009
Published online 24 July 2009
EPL, 87 (2009) 17009
DOI: 10.1209/0295-5075/87/17009

Quantum Hall effect in biased bilayer graphene

R. Ma1, 2, L. J. Zhu2, L. Sheng3, M. Liu1 and D. N. Sheng2

1   Department of Physics, Southeast University - Nanjing 210096, China
2   Department of Physics and Astronomy, California State University - Northridge, CA 91330, USA
3   National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University Nanjing 210093, China

njrma@hotmail.com

received 10 May 2009; accepted in final form 25 June 2009; published July 2009
published online 24 July 2009

Abstract
We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity $\sigma _{xy}=\nu e^{2}/h$ (where $\nu$ is an integer) are observed around the band center due to the split of the valley degeneracy by an opposite voltage bias added to the two layers. The central (n = 0) Dirac-Landau level is also split, which leads to a pronounced $\nu$ = 0 plateau. This is consistent with the opening of a sizable gap between the valence and conduction bands. The exact spectrum in an open system further reveals that there are no conducting edge states near zero energy, indicating an insulator state with zero conductance. Consequently, the resistivity should diverge at the Dirac point. Interestingly, the $\nu$ = 0 insulating state can be destroyed by disorder scattering with intermediate strength, where a metallic region is observed near zero energy. In the strong-disorder regime, the Hall plateaus with nonzero $\nu$ are destroyed due to the float-up of extended levels toward the band center and higher plateaus disappear first.

PACS
73.43.Cd - Theory and modeling.
72.10.-d - Theory of electronic transport; scattering mechanisms.
72.15.Rn - Localization effects (Anderson or weak localization).

© EPLA 2009