| Issue |
EPL
Volume 87, Number 2, July 2009
|
|
|---|---|---|
| Article Number | 27003 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/87/27003 | |
| Published online | 29 July 2009 | |
Valence-bond theory of highly disordered quantum antiferromagnets
1
National High Magnetic Field Laboratory, Florida State University - Tallahassee, FL 32310, USA
2
Department of Physics, Duke University - Durham, NC 27708, USA
3
Instituto de Física Gleb Wataghin, Unicamp - C.P. 6165, Campinas, São Paulo 13083-970, Brazil
Corresponding author: jh146@phy.duke.edu
Received:
16
April
2009
Accepted:
1
July
2009
We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters.
PACS: 75.10.Jm – Quantized spin models / 71.55.-i – Impurity and defect levels / 71.70.Gm – Exchange interactions
© EPLA, 2009
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