Issue
EPL
Volume 87, Number 2, July 2009
Article Number 26004
Number of page(s) 5
Section Condensed Matter: Structural, Mechanical and Thermal Properties
DOI http://dx.doi.org/10.1209/0295-5075/87/26004
Published online 30 July 2009
EPL, 87 (2009) 26004
DOI: 10.1209/0295-5075/87/26004

Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices

E. Talbot1, R. Lardé1, F. Gourbilleau2, C. Dufour2 and P. Pareige1

1   Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av. de l'université, BP 12, 76801 Saint Etienne du Rouvray, France, EU
2   Centre de Recherche sur les Ions, les Matériaux et la Photonique - Equipe NIMPH, UMR CNRS 6252 ENSICAEN 6 Bd. Maréchal Juin, 14050 Caen, France, EU

etienne.talbot@univ-rouen.fr

received 20 January 2009; accepted in final form 6 July 2009; published July 2009
published online 30 July 2009

Abstract
Three-dimensional imaging of silicon nanoclusters array in silicon-rich silicon oxide layers was evidenced and studied. The atom probe tomography technique allows to give the composition of the nanoclusters and the composition of the interface with the silica matrix. These results give new insights for the understanding of the properties of Si-based photonic devices.

PACS
61.46.-w - Structure of nanoscale materials.
68.37.-d - Microscopy of surfaces, interfaces, and thin films.
81.15.Cd - Deposition by sputtering.

© EPLA 2009