Volume 87, Number 3, August 2009
Article Number 37002
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 25 August 2009
EPL, 87 (2009) 37002
DOI: 10.1209/0295-5075/87/37002

Anderson transition in disordered graphene

M. Amini1, S. A. Jafari1, 2 and F. Shahbazi1

1   Department of Physics, Isfahan University of Technology - Isfahan 84154-83111, Iran
2   The Abdus Salam ICTP - 34100 Trieste, Italy, EU

received 31 May 2009; accepted in final form 21 July 2009; published August 2009
published online 25 August 2009

We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite-size errors. Within this approach, both weak- and strong-disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak-disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a mobility edge separating localized states around the Fermi point, from the remaining extended states.

72.15.Rn - Localization effects (Anderson or weak localization).
72.20.Ee - Mobility edges; hopping transport.
81.05.Uw - Carbon, diamond, graphite.

© EPLA 2009