Issue
EPL
Volume 87, Number 4, August 2009
Article Number 47001
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI http://dx.doi.org/10.1209/0295-5075/87/47001
Published online 31 August 2009
EPL, 87 (2009) 47001
DOI: 10.1209/0295-5075/87/47001

Effects of hydrogen impurities on Ge1-xMnx semiconductors

X. L. Wang1, M. Y. Ni1, Z. Zeng1 and H. Q. Lin2

1   Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences and Graduate School of the Chinese Academy of Sciences - Hefei 230031, PRC
2   Department of Physics and Institute of Theoretical Physics, The Chinese University of Hong Kong Shatin, Hong Kong, China

zzeng@theory.issp.ac.cn

received 27 February 2009; accepted in final form 28 July 2009; published August 2009
published online 31 August 2009

Abstract
The structural and magnetic properties of hydrogen-doped Ge1-xMnx diluted magnetic semiconductors are investigated using a first-principles pseudopotential method. Our results show that hydrogen impurities intend to bond to Mn ions in the Mn-doped Ge system and strongly influence the magnetic properties of this system. Hydrogen impurities actually reduce the Curie temperature of this system and might be one of the reasons for the existence of paramagnetic samples of Ge1-xMnx. Alternatively, hydrogenation can provide an easy and nonvolatile way to control and pattern the ferromagnetic properties of Mn-doped Ge diluted magnetic semiconductors, which has been achieved in the Mn-doped GaAs system (GOENNENWEIN S. T. B. et al., Phys. Rev. Lett., 92 (2004) 227202).

PACS
75.50.Pp - Magnetic semiconductors.
71.55.Gs - II–VI semiconductors.
71.22.+i - Electronic structure of liquid metals and semiconductors and their alloys.

© EPLA 2009