Volume 88, Number 1, October 2009
Article Number 17007
Number of page(s) 5
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 23 October 2009
EPL, 88 (2009) 17007
DOI: 10.1209/0295-5075/88/17007

Interaction-mediated asymmetries of the quantized Hall effect

A. Siddiki1, 2, J. Horas1, J. Moser1, W. Wegscheider3 and S. Ludwig1

1   Physics Department, Arnold Sommerfeld Center for Theoretical Physics, and Center for NanoScience, Ludwig-Maximilans-Universität - Theresienstrasse 37, 80333 Munich, Germany, EU
2   Physics Department, Faculty of Arts and Sciences, Mugla University - 48170-Kötekli, Mugla, Turkey
3   Institut für Experimentelle und Angewandte Physik, Universität Regensburg - D-93040 Regensburg, Germany, EU

received 30 July 2009; accepted in final form 22 September 2009; published October 2009
published online 23 October 2009

Experimental and theoretical investigations on the integer quantized Hall effect in gate-defined narrow Hall bars are presented. At low electron mobility the classical (high-temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high-mobility samples the intersection point, at even filling factors $\nu$ = 2, 4, ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i.e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at $\nu$ = 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.

73.43.Cd - Theory and modelling.
73.43.Fj - Novel experimental methods; measurements.
73.43.-f - Quantum Hall effects.

© EPLA 2009