Effect of pressure and stress on blistering induced by hydrogen implantation in silicon
Institut P’ UPR 3346 CNRS, Université de Poitiers, ENSMA - SP2MI, Teleport 2, bd. Curie, F-86962 Futuroscope, France, EU
Accepted: 16 September 2010
Silicon wafers have been implanted with hydrogen at high fluence and buckling structures have been observed after thermal treatments. The effects of both internal pressure and residual stresses on the blistering have been then investigated in the framework of the Föppl-von Karman theory of thin plates and the buckle profiles have been determined. The internal pressure inside the cavities resulting from the implantation conditions is finally derived with the help of the experimental profiles of the buckles.
PACS: 61.80.-x – Physical radiation effects, radiation damage / 62.20.mq – Buckling / 68.35.bg – Semiconductors
© EPLA, 2010