Electron-phonon interactions in a single modulation-doped GaInAs quantum well
LNCMI, CNRS-UJF-UPS-INSA - B.P. 166, 38042 Grenoble Cedex 9, France, EU
2 Institute for Microstructural Sciences of Canada - Ottawa K1A0R6, Canada
Accepted: 13 October 2010
Precise absolute far–infra-red magneto-transmission experiments have been performed under magnetic fields up to 28 T on a series of single Ga0.24In0.76As quantum wells n-type modulation doped at different levels. The transmission spectra have been simulated with a multilayer dielectric model. This allows us to extract the imaginary part of the optical response function which reveals new singular features related to electron-phonon interactions. In addition to the expected polaronic effects due to the longitudinal (LO) phonons, one observes other interactions with the transverse optical (TO) phonons and a new kind of carrier concentration-dependent interaction with interface phonons. This system provides a unique opportunity to study multiple types of electron-phonon interactions in a single type of compound.
PACS: 78.67.De – Quantum wells / 71.38.-k – Polarons and electron-phonon interactions / 78.30.Fs – III-V and II-VI semiconductors
© EPLA, 2010