Issue |
EPL
Volume 109, Number 1, January 2015
|
|
---|---|---|
Article Number | 17007 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/109/17007 | |
Published online | 22 January 2015 |
Growth of superconducting NdFe0.88Co0.12AsO films by metal-organic chemical vapor deposition and post arsenic diffusion
1 Departamento de Física, CINVESTAV-IPN - Apdo. Postal 14-740, México D.F. 07360, México
2 CINVESTAV-IPN, Unidad Mérida, Departamento de Física Aplicada - Apdo. Postal Cordemex. 97310, Mérida, Yuc., México
3 Departamento de Ingeniería Eléctrica, CINVESTAV-IPN - Apdo. Postal 14-740, México D.F. 07360, México
Received: 18 October 2014
Accepted: 18 December 2014
Metal-organic chemical vapor deposition (MOCVD) and post-deposition arsenic diffusion processes were successfully employed to grow superconducting NdFe0.88Co0.12AsO thin films. First, by employing iron, cobalt and neodymium metal-organic precursors, a precursor film is grown by MOCVD on (001)-oriented LaAlO3 substrates. Subsequently, the arsenic is incorporated during an annealing of these precursor films in the presence of a NdFe0.9Co0.1AsO pellet. The chemical composition and crystallographic results indicate the formation of the cobalt-doped NdFeAsO polycrystalline phase. The secondary ion mass spectroscopy indicates a homogeneous arsenic diffusion process. The resistance and magnetization measurements as a function of temperature indicate a superconducting transition ${\sim}15\ \text{K}$ .
PACS: 74.78.-w – Superconducting films and low-dimensional structures / 74.70.Xa – Pnictides and chalcogenides / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
© EPLA, 2015
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