Volume 109, Number 1, January 2015
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 January 2015|
Electric-field control of non-volatile magnetization switching without external-magnetic-field bias in CoFeB/(011)-PMN-0.3PT heterostructures
1 National Synchrotron Radiation, Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China - Hefei, Anhui 230026, China
2 CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China - Hefei, Anhui 230026, China
3 Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China - Hefei, Anhui 230026, China
Received: 31 August 2014
Accepted: 23 December 2014
Electric-field control of non-volatile magnetization switching in the absence of external-magnetic-field bias has been investigated in multiferroic Co40Fe40B20/0.7Pb(Mg1/3Nb2/3)-0.3PbTiO3 (CoFeB/PMN-0.3PT) heterostructure at room temperature. The two non-volatile magnetic states are achieved without magnetic-field bias and can be switched in a reversible and reproducible manner by an electric field. These results are attributed to the modulation of the magnetic anisotropy of the CoFeB layer by as-grown magnetic field and electric-field–induced non-volatile strain through unipolar-electric-field cycling. High-resolution X-ray diffraction studies on the (022) peaks under in situ electric field indicate that the non-volatile strain is closely related to the 71° ferroelastic domain switching ($r1/r2$ to $r3/r4$ ) of the PMN-0.3PT substrate. The corresponding ratio of the ferroelastic domain $r3/r4$ is electrically changed by 14.1% between the two non-volatile magnetic states. Our results provide a promising path to non-magnetically operating magnetic bits by pure electric field at room temperature.
PACS: 75.85.+t – Magnetoelectric effects, multiferroics / 77.80.Jk – Relaxor ferroelectrics / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces
© EPLA, 2015
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