| Issue |
Europhys. Lett.
Volume 39, Number 6, September 1997
|
|
|---|---|---|
| Page(s) | 623 - 626 | |
| Section | Condensed matter: structure, thermal and mechanical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00404-8 | |
| Published online | 01 September 2002 | |
Diffusion process of metals in silica during ion irradiation
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, IN2P3-CNRS,
Bâtiment 108, F-91405 Orsay Campus, France
Received:
13
March
1997
Accepted:
4
August
1997
The mixing mechanism of thin layers of Au, Pt or W embedded in silica when
irradiated with 4.5 MeV Au ions was studied as a function of the ion fluence
ϕ, temperature T and layer thickness d. Analysis of the diffusion process
by means of Rutherford backscattering spectrometry showed that the spreading
of metal peaks was anisotropic and that their variance varied as ϕ at room
temperature or 
at 100 K. This behavior is attributed to an association
of metal atoms with diffusing defects.
PACS: 61.80.Jh – Ion radiation effects / 81.05.Ys – Nanophase materials / 66.30.-h – Diffusion in solids
© EDP Sciences, 1997
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