Volume 39, Number 6, September 1997
|Page(s)||623 - 626|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Diffusion process of metals in silica during ion irradiation
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, IN2P3-CNRS,
Bâtiment 108, F-91405 Orsay Campus, France
Accepted: 4 August 1997
The mixing mechanism of thin layers of Au, Pt or W embedded in silica when irradiated with 4.5 MeV Au ions was studied as a function of the ion fluence ϕ, temperature T and layer thickness d. Analysis of the diffusion process by means of Rutherford backscattering spectrometry showed that the spreading of metal peaks was anisotropic and that their variance varied as ϕ at room temperature or at 100 K. This behavior is attributed to an association of metal atoms with diffusing defects.
PACS: 61.80.Jh – Ion radiation effects / 81.05.Ys – Nanophase materials / 66.30.-h – Diffusion in solids
© EDP Sciences, 1997
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