| Issue |
Europhys. Lett.
Volume 38, Number 1, April 1997
|
|
|---|---|---|
| Page(s) | 55 - 60 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00534-y | |
| Published online | 01 September 2002 | |
Negative magnetoresistance in the nearest-neighbor hopping conduction
1
Physics Department, The Hong Kong University of Science and Technology Clear Water Bay, Hong Kong
2
Department of Physics, Oklahoma State University - Stillwater, OK 74078, USA
Received:
15
October
1996
Accepted:
20
February
1997
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest-neighbor clusters is the main transport mechanism. We show that the hopping probability increases with magnetic field. This is originated from the level crossing in a few-electron cluster. Thus, the overlap of electronic states of two neighboring clusters increases, and negative magnetoresistance results.
PACS: 72.20.My – Galvanomagnetic and other magnetotransport effects / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 71.55.Jv – Disordered structures; amorphous and glassy solids
© EDP Sciences, 1997
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