Volume 38, Number 1, April 1997
|Page(s)||55 - 60|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Negative magnetoresistance in the nearest-neighbor hopping conduction
Physics Department, The Hong Kong University of Science and Technology Clear Water Bay, Hong Kong
2 Department of Physics, Oklahoma State University - Stillwater, OK 74078, USA
Accepted: 20 February 1997
We propose a size effect which leads to the negative magnetoresistance in granular metal-insulator materials in which the hopping between two nearest-neighbor clusters is the main transport mechanism. We show that the hopping probability increases with magnetic field. This is originated from the level crossing in a few-electron cluster. Thus, the overlap of electronic states of two neighboring clusters increases, and negative magnetoresistance results.
PACS: 72.20.My – Galvanomagnetic and other magnetotransport effects / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 71.55.Jv – Disordered structures; amorphous and glassy solids
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.