| Issue |
Europhys. Lett.
Volume 68, Number 5, December 2004
|
|
|---|---|---|
| Page(s) | 706 - 712 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2004-10270-x | |
| Published online | 05 November 2004 | |
Analysis of the magnetotransport channels
in tunnel junctions with amorphous 
1
Siemens AG, Corporate Technology CT-MM1 Paul-Gossen-Str. 100, 91052, Erlangen, Germany
2
I. Physikalisches Institut, University of Göttingen Tammannstr. 1, 37077, Göttingen, Germany
Corresponding author: theo.dimopoulos.ext@erls.siemens.de
Received:
1
June
2004
Accepted:
12
October
2004
This work concerns the temperature and bias dependence of the
magnetotransport properties of 
oxide-based tunnel
junctions with an amorphous 
soft
ferromagnetic electrode and 
-based
polycrystalline hard electrode. The junctions present high tunnel
magnetoresistance of 
% at room temperature and
% at 5
. A model that takes magnon-assisted
inelastic tunneling into account fits satisfactorily the parallel
(P) and antiparallel (AP) conductance as a function of
temperature. The extracted fitting parameters are then used to
reproduce the low-bias anomaly of the P and AP conductance at low
temperature.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures / 75.47.De – Giant magnetoresistance
© EDP Sciences, 2004
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