Volume 68, Number 5, December 2004
|Page(s)||706 - 712|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||05 November 2004|
Analysis of the magnetotransport channels in tunnel junctions with amorphous
Siemens AG, Corporate Technology CT-MM1 Paul-Gossen-Str. 100, 91052, Erlangen, Germany
2 I. Physikalisches Institut, University of Göttingen Tammannstr. 1, 37077, Göttingen, Germany
Corresponding author: firstname.lastname@example.org
Accepted: 12 October 2004
This work concerns the temperature and bias dependence of the magnetotransport properties of oxide-based tunnel junctions with an amorphous soft ferromagnetic electrode and -based polycrystalline hard electrode. The junctions present high tunnel magnetoresistance of % at room temperature and % at 5. A model that takes magnon-assisted inelastic tunneling into account fits satisfactorily the parallel (P) and antiparallel (AP) conductance as a function of temperature. The extracted fitting parameters are then used to reproduce the low-bias anomaly of the P and AP conductance at low temperature.
PACS: 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures / 75.47.De – Giant magnetoresistance
© EDP Sciences, 2004
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