| Issue |
Europhys. Lett.
Volume 33, Number 4, February I 1996
|
|
|---|---|---|
| Page(s) | 285 - 290 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1996-00334-5 | |
| Published online | 01 September 2002 | |
Thermoelectric power of metallic Si:(P,B) at very low temperatures
Physikalisches Institut, Universität Karlsruhe - D-76128
Karlsruhe, Germany
Received:
13
November
1995
Accepted:
18
December
1995
The thermoelectric power S(T) of metallic compensated Si:(P,B) samples with
carrier concentration N = 13.0 and 
has
been measured between 0.1 and 10 K. For the more heavily doped sample, the
low-T data can be well described with a negative T -linear
nearly-free–electron diffusion
term and a T3 phonon-drag contribution. The sample closer to the metal-insulator
transition (critical concentration
for the compensation ratio of this
sample), exhibits a sign change of S(T) at 0.35 K, becoming positive
towards lower T . The ensuing maximum (since 
is
attributed to Kondo scattering by local magnetic moments. This is supported
by the suppression of this maximum and recovery of a linear S(T) in a
magnetic field of 
.
PACS: 71.30.+h – Metal-insulator transitions / 71.55.Cn – Elemental semiconductors / 72.20.Pa – Thermoelectric effects
© EDP Sciences, 1996
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