Volume 33, Number 8, March II 1996
|Page(s)||629 - 634|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Boltzmann equation approach for transport in systems subject to microwave irradiation
Department of Physics, Gakushuin University, 1-5-1
Mejiro, Toshima-ku, Tokyo 171, Japan
Accepted: 18 January 1996
We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi–one-dimensional ballistic quantum wire and a two-dimensional system with impurity scattering. For the latter, deviations from the Drude result are predicted for the conductivity tensor. This should be observable in systems where the scattering rate depends noticeably on the Fermi energy. The deviations are calculated explicitly for the case of a 2d silicon layer, where they strongly depend on the microwave polarization and the Fermi energy.
PACS: 72.10.Bg – General formulation of transport theory / 72.15.Lh – Relaxation times and mean free paths / 72.30.+q – High-frequency effects; plasma effects
© EDP Sciences, 1996
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.