Issue |
Europhys. Lett.
Volume 34, Number 6, May III 1996
|
|
---|---|---|
Page(s) | 423 - 428 | |
Section | Condensed matter: structure, thermal and mechanical properties | |
DOI | https://doi.org/10.1209/epl/i1996-00473-7 | |
Published online | 01 September 2002 |
High undercooling of bulk molten silicon by containerless processing
Institut für Raumsimulation, Deutsche Forschungsanstalt für
Luft- und Raumfahrt, D-51140 Köln, Germany
Received:
12
February
1996
Accepted:
3
April
1996
When containerless electromagnetic levitation processing was
applied to elemental semiconductor Si using a two-step heating method proposed
by the present authors, a substantial degree of undercooling up to 420 K
(, Tm is the melting temperature, 1685 K for Si) has
been reproducibly achieved in slowly cooled silicon droplets (
in diameter). The microstructural change from faceted twins grown at low or
intermediate undercoolings to twin-free grains formed at high undercoolings
indicates a transition of solidification mechanisms. The experimental results,
of which both the undercooling level and the sample volume surpass the previous
work, lead to a reassessment of the nucleation frequency and the crystal/melt
interfacial energy of undercooled Si liquid.
PACS: 64.70.Dv – Solid-liquid transitions / 81.30.Fb – Solidification
© EDP Sciences, 1996
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