| Issue |
Europhys. Lett.
Volume 35, Number 3, July 1996
|
|
|---|---|---|
| Page(s) | 195 - 200 | |
| Section | Condensed matter: structure, thermal and mechanical properties | |
| DOI | https://doi.org/10.1209/epl/i1996-00553-2 | |
| Published online | 01 September 2002 | |
Pressure dependence of dynamical and dielectric properties of 3C and 4H silicon carbide
Friedrich-Schiller-Universität,
Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1,
07743 Jena, Germany
Received:
25
March
1996
Accepted:
5
June
1996
We report a first-principle study on the pressure dependence of dynamical and dielectric properties of cubic 3C and hexagonal 4H polytypes of SiC. Results are discussed for the zone-center phonon modes and the tensors of the Born effective charges and the high-frequency dielectric constants. In the case of the hexagonal 4H structure we predict an increasing anisotropy with pressure and a pressure-induced mixing of infra-red active optic modes. The interpretation of recent experiments for 6H SiC is critically examined.
PACS: 61.50.Ks – Crystallographic aspects of polymorphic and order-disorder transformations / 63.20.Dj – Phonon states and bands, normal modes, and phonon dispersion / 78.30.-j – Infrared and Raman spectra and scattering
© EDP Sciences, 1996
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