Volume 35, Number 3, July 1996
|Page(s)||215 - 220|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi2 detected by electron energy loss spectroscopy
Laboratoire de Physique et de Spectroscopie Electronique, URA
CNRS 1435, Faculté des Sciences et Techniques - 4, rue des Frères Lumière,
68093 Mulhouse Cedex, France
Accepted: 5 June 1996
Using high-resolution electron energy loss spectroscopy, we find that two-di men sio nal silicide epitaxially grown on Si(111) undergoes a semimetal-semiconductor transition upon atomic H dosing. Passivation of the Si top layer already inferred from previous photoemission work is directly demonstrated and provides further evidence of the similarity between the silicide surface atomic structure and the ideal Si(111) termination. Nevertheless, in contrast with the latter case it is shown by using simple chemical bonding and electron counting arguments that saturation of the Si dangling bonds cannot explain by itself the semiconducting nature of the hydrogenated silicide. Possible mechanisms that might account for the observed transition are discussed.
PACS: 71.30.+h – Metal-insulator transitions / 79.20.Kz – Other electron-impact emission phenomena / 73.20.Mf – Collective excitations (including plasmons and other charge-density excitations)
© EDP Sciences, 1996
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