Volume 36, Number 2, October II 1996
|Page(s)||129 - 134|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Dynamic scaling in conserved systems with coupled fields: Application to surfactant-mediated growth
Department of Physics, University of Notre Dame - Notre Dame, IN 46556, USA
2 Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, MA 02139, USA
Accepted: 29 August 1996
We present an analytical study of the interaction of two nonequilibrium conservative fields. Due to the conservative character of the relaxation mechanism, the scaling exponents can be obtained exactly using dynamic renormalization group. We apply our results to surfactant-mediated growth of semiconductors. We find that the coupling between the surfactant thickness and the interface height cannot account for the experimentally observed layered growth, implying that reduced diffusion of the embedded atoms is a key mechanism in surfactant-mediated growth.
PACS: 68.55.-a – Thin film growth, structure, and epitaxy / 68.35.Fx – Diffusion; interface formation / 64.60.Ht – Dynamic critical phenomena
© EDP Sciences, 1996
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