Volume 36, Number 7, December I 1996
|Page(s)||527 - 532|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition
Physikalisches Institut, Universität Karlsruhe, D-76128 Karlsruhe,
Accepted: 17 October 1996
High-resolution measurements of the electrical conductivity below of uncompensated Si:P with P concentration N above the critical concentration Nc are reported. In a narrow N range, roughly 10% above Nc, actually exhibits a shallow maximum which rapidly shifts to higher T with decreasing N. These features, as well as the strong shift of the maxima towards higher T with magnetic field, are interpreted in terms of the suppression of the triplet particle-hole channel in the electron-electron interaction, arising from spin-flip scattering due to local magnetic moments.
PACS: 71.30.+h – Metal-insulator transitions / 71.55.-i – Impurity and defect levels / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 1996
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