| Issue |
Europhys. Lett.
Volume 36, Number 7, December I 1996
|
|
|---|---|---|
| Page(s) | 527 - 532 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1996-00264-2 | |
| Published online | 01 September 2002 | |
Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition
Physikalisches Institut, Universität Karlsruhe, D-76128 Karlsruhe,
Germany
Received:
20
September
1996
Accepted:
17
October
1996
High-resolution measurements of the electrical conductivity 
below 
of uncompensated Si:P with P concentration N above the
critical concentration Nc are reported. In a narrow N range, roughly
10% above Nc, actually exhibits a shallow
maximum which rapidly shifts to higher T with decreasing N.
These features, as well
as the strong shift of the maxima towards higher T with magnetic field, are
interpreted in terms of the suppression of the triplet particle-hole channel in the
electron-electron interaction, arising from spin-flip scattering due to local
magnetic moments.
PACS: 71.30.+h – Metal-insulator transitions / 71.55.-i – Impurity and defect levels / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 1996
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