| Issue |
Europhys. Lett.
Volume 36, Number 8, December II 1996
|
|
|---|---|---|
| Page(s) | 565 - 570 | |
| Section | General | |
| DOI | https://doi.org/10.1209/epl/i1996-00270-x | |
| Published online | 01 September 2002 | |
Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers
1
Sektion Physik der Ludwig-Maximilians-Universität München,
Geschwister-Scholl-Platz 1, D-80539 München, Germany
2
Institut für Experimental Physik, Universität Regensburg, D-93040
Regensburg, Germany
3
Institut Laue Langevin, B.P.156, F-38043 Grenoble, France
4
ESRF - B.P. 220, F-38043 Grenoble, France
Received:
27
June
1996
Accepted:
26
October
1996
We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation.
PACS: 05.40.+j – Fluctuation phenomena, random processes, and Brownian motion / 61.10.-i – X-ray diffraction and scattering / 68.55.-a – Thin film growth, structure, and epitaxy.
© EDP Sciences, 1996
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