Volume 36, Number 9, December III 1996
|Page(s)||713 - 718|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Epitaxially induced anisotropy in thin films of Laves phase compounds
Laboratoire Métallurgie Physique et Science
des Matériaux (URA au
Université H. Poincaré-Nancy I - BP 239, 54506 Vandoeuvre-lès-Nancy Cedex,
2 Laboratoire de Cristallographie - BP 166, 38042 Grenoble Cedex 9, France
Accepted: 6 November 1996
Thin films of and have been epitaxially grown along the  direction. At 4.2 K, the easy magnetization axis in the films, determined by Mössbauer spectroscopy, is the same as in bulk compounds (i.e. for and for ). At 300 K, the magnetic moments, which remain in the same direction as at 4.2 K in bulk compounds, rotate towards directions in thin films: they are close to the in-plane direction in films, and close to the perpendicular-to-the-plane  direction in films. These modifications of the magnetic anisotropy are related to the epitaxial strains, and to the sign and the relative importance of the anisotropy and magnetoelastic constants of the compound.
PACS: 75.30.Gw – Magnetic anisotropy / 76.80.+y – Moessbauer effect; other gamma-ray spectroscopy / 75.70.-i – Magnetic films and multilayers
© EDP Sciences, 1996
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