| Issue |
Europhys. Lett.
Volume 36, Number 9, December III 1996
|
|
|---|---|---|
| Page(s) | 713 - 718 | |
| Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1996-00292-4 | |
| Published online | 01 September 2002 | |
Epitaxially induced anisotropy in thin films of Laves phase compounds
1
Laboratoire Métallurgie Physique et Science
des Matériaux (URA au
CNRS 155),
Université H. Poincaré-Nancy I - BP 239, 54506 Vandoeuvre-lès-Nancy Cedex,
France
2
Laboratoire de Cristallographie - BP 166, 38042 Grenoble Cedex 9, France
Received:
29
July
1996
Accepted:
6
November
1996
Thin films of 
and 
have been epitaxially grown along the [110]
direction. At 4.2 K, the easy magnetization axis in the films, determined
by Mössbauer spectroscopy, is the same as in bulk compounds (i.e.
for and 
for 
). At 300 K, the magnetic
moments, which remain in the same direction as at 4.2 K in bulk compounds, rotate
towards 
directions in thin films: they are close to the in-plane
![$[1\overline10]$](/articles/epl/abs/1996/36/36913/36913_tex_eq8.png)
direction in
films, and close to the perpendicular-to-the-plane [110] direction
in films. These modifications of the magnetic anisotropy are related
to the epitaxial strains, and to the sign and the relative importance of
the anisotropy and magnetoelastic constants of the compound.
PACS: 75.30.Gw – Magnetic anisotropy / 76.80.+y – Moessbauer effect; other gamma-ray spectroscopy / 75.70.-i – Magnetic films and multilayers
© EDP Sciences, 1996
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