Volume 37, Number 2, January II 1997
|Page(s)||151 - 156|
|Section||Cross-disciplinary physics and related areas of science and technology|
|Published online||01 September 2002|
Electron wave filters from inverse scattering theory
Service de Physique Théorique, C.E. Saclay - 91191 Gif-sur-Yvette Cedex, France
2 Center for Theoretical Study of Physical Systems, Clark, Atlanta University, Atlanta, GA 30314, USA
3 Istituto di Scienze Matematiche e Fisiche, Università di Milano sede di Como, Via Lucini 3, 22100 Como, Italy
4 Institutul de Fizica şi Tehnologia Materialelor, C.P. MG-7, Bucureşti - Măgurele, Romania
5 Facultatea de Fizică, Universitatea Bucureşti, C.P. MG-11, Bucureşti - Măgurele, Romania
Accepted: 26 November 1996
Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: a) Padé approximant reconstruction of the S-matrix; b) inverse scattering theory for Schrödinger's equation; c) a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12-layer filter with the high-energy peak more than twice narrower than the low-energy one.
PACS: 85.30.De – Semiconductor device characterization and modeling / 03.65.Nk – Nonrelativistic scattering theory / 73.20.Dx – Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures and intercalation compounds)
© EDP Sciences, 1997
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