Volume 38, Number 3, April III 1997
|Page(s)||177 - 182|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Observation of P donors on the Si(111) surface by scanning tunneling microscopy
Physikalisches Institut, Universität Karlsruhe - D-76128 Karlsruhe, Germany
Accepted: 13 March 1997
We report on the individual observation of substitutional P donors on the reconstructed Si (111) surface by means of scanning tunneling microscopy and tunneling spectroscopy. Depending on the scanning voltage, the dopants give rise to different features superimposed on the background lattice. This is explained by the influence of the charged P atom on the electronic surface-states resulting in a local band shift. The spatial arrangement of the donors obeys a statistical distribution, excluding significant clustering even at a P concentration of cm-3 which is far above the metal-insulator transition.
PACS: 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc / 68.35.Dv – Composition; defects and impurities / 71.55.Cn – Elemental semiconductors
© EDP Sciences, 1997
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