| Issue |
Europhys. Lett.
Volume 38, Number 3, April III 1997
|
|
|---|---|---|
| Page(s) | 177 - 182 | |
| Section | Condensed matter: structure, thermal and mechanical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00222-0 | |
| Published online | 01 September 2002 | |
Observation of P donors on the Si(111) surface by scanning tunneling microscopy
Physikalisches Institut, Universität Karlsruhe - D-76128 Karlsruhe, Germany
Received:
21
January
1997
Accepted:
13
March
1997
We report on the individual observation of substitutional P donors on
the reconstructed Si (111) 
surface by means of scanning
tunneling microscopy and tunneling spectroscopy. Depending on the
scanning voltage, the dopants give rise to different features
superimposed on the background lattice. This is explained by the
influence of the charged P atom on the electronic surface-states
resulting in a local band shift. The spatial arrangement of the
donors obeys a statistical distribution, excluding significant
clustering even at a P concentration of 
cm-3
which is far above the metal-insulator transition.
PACS: 61.16.Ch – Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc / 68.35.Dv – Composition; defects and impurities / 71.55.Cn – Elemental semiconductors
© EDP Sciences, 1997
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