Volume 38, Number 6, May III 1997
|Page(s)||447 - 452|
|Section||Condensed matter: structure, thermal and mechanical properties|
|Published online||01 September 2002|
Transition between dynamic regimes in the sputter ablation of Ge(001)
Risø National Laboratory, - DK-4000, Roskilde, Denmark
2 CARS, University of Chicago - Chicago IL 60637, USA
Accepted: 17 April 1997
We have studied the dynamic behavior of the Ge(001) surface during sputtering using in situ, real-time synchrotron X-ray diffraction. Two dynamic regimes were found which are characterized by kinetic roughening exponents β of 0.1 and 0.4, respectively. We observed an abrupt transition of the system between these two dynamic regimes both as a function of temperature and ion current. From the boundary between the regimes we derive an activation energy of the relevant diffusion process of 1.1 eV.
PACS: 64.60.Ht – Dynamic critical phenomena / 61.10.-i – X-ray diffraction and scattering / 68.35.Bs – Surface structure and topography
© EDP Sciences, 1997
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.