Issue |
Europhys. Lett.
Volume 38, Number 6, May III 1997
|
|
---|---|---|
Page(s) | 447 - 452 | |
Section | Condensed matter: structure, thermal and mechanical properties | |
DOI | https://doi.org/10.1209/epl/i1997-00266-0 | |
Published online | 01 September 2002 |
Transition between dynamic regimes in the sputter ablation of Ge(001)
1
Risø National Laboratory, - DK-4000, Roskilde, Denmark
2
CARS, University of Chicago - Chicago IL 60637, USA
Received:
6
November
1996
Accepted:
17
April
1997
We have studied the dynamic behavior of the Ge(001) surface during sputtering using in situ, real-time synchrotron X-ray diffraction. Two dynamic regimes were found which are characterized by kinetic roughening exponents β of 0.1 and 0.4, respectively. We observed an abrupt transition of the system between these two dynamic regimes both as a function of temperature and ion current. From the boundary between the regimes we derive an activation energy of the relevant diffusion process of 1.1 eV.
PACS: 64.60.Ht – Dynamic critical phenomena / 61.10.-i – X-ray diffraction and scattering / 68.35.Bs – Surface structure and topography
© EDP Sciences, 1997
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