| Issue |
Europhys. Lett.
Volume 39, Number 6, September 1997
|
|
|---|---|---|
| Page(s) | 669 - 674 | |
| Section | Condensed matter: electronic, structure, electrical, magnetic and optical properties | |
| DOI | https://doi.org/10.1209/epl/i1997-00413-7 | |
| Published online | 01 September 2002 | |
YBa2Cu3O7-δ films with high critical current density on epitaxial films of Ba2LaNbO6, a new perovskite substrate for YBa2CuO7-δ superconductor
1
Tata Institute of Fundamental Research, Mumbai 400005, India
2
Regional Research Laboratory (CSIR), Trivandrum 695019, India
Received:
24
March
1997
Accepted:
6
August
1997
, a new perovskite substrate material for 
, has been grown epitaxially on (100) MgO by
pulsed-laser ablation method. A superconducting 
film in situ grown
on an epitaxial
film gave a
with a transition width 
. The 
films exhibited 
orientation of an orthorhombic phase and showed almost perfect metallic behaviour in the normal state with
resistance ratio 
. Critical current density of 
at 77 K was obtained consistently for the 
films in situ grown on
epitaxial films.
PACS: 74.76.Bz – High-Tc films
© EDP Sciences, 1997
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