Volume 39, Number 6, September 1997
|Page(s)||669 - 674|
|Section||Condensed matter: electronic, structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
YBa2Cu3O7-δ films with high critical current density on epitaxial films of Ba2LaNbO6, a new perovskite substrate for YBa2CuO7-δ superconductor
Tata Institute of Fundamental Research, Mumbai 400005, India
2 Regional Research Laboratory (CSIR), Trivandrum 695019, India
Accepted: 6 August 1997
, a new perovskite substrate material for , has been grown epitaxially on (100) MgO by pulsed-laser ablation method. A superconducting film in situ grown on an epitaxial film gave a with a transition width . The films exhibited orientation of an orthorhombic phase and showed almost perfect metallic behaviour in the normal state with resistance ratio . Critical current density of at 77 K was obtained consistently for the films in situ grown on epitaxial films.
PACS: 74.76.Bz – High-Tc films
© EDP Sciences, 1997
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