| Issue |
Europhys. Lett.
Volume 40, Number 5, December I 1997
|
|
|---|---|---|
| Page(s) | 581 - 586 | |
| Section | Cross-disciplinary physics and related areas of science and technology | |
| DOI | https://doi.org/10.1209/epl/i1997-00508-7 | |
| Published online | 01 September 2002 | |
Reduction of the C49-C54 TiSi2 phase transformation temperature by reactive Ti deposition
1
Dipartimento di Fisica, Università di Catania and Istituto Nazionale
per la Fisica della Materia, Corso Italia 57, I-95129 Catania, Italy
2
CNR-IMETEM, Stradale Primosole 50, I-95121 Catania, Italy
Received:
26
June
1997
Accepted:
16
October
1997
The kinetic of the C49-C54 polymorphic transformation in titanium disilicides
thin films grown on either (100) and amorphous Si substrates has been studied.
C49 
layers were formed by rapid thermal processing of Ti films deposited
by electron beam in ultra high vacuum. The kinetic of the C49-C54 transformation
was followed by sheet resistance measurements, while the morphology and the
grain size of C49 TiSi2 were measured by atomic force microscopy. A relation
between the sample preparation procedure, the C49 grain size and the transformation
temperature was found. The activation energy for the transformation (
eV) resulted to be independent of the C49 grain size.
PACS: 81.30.Hd – Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder / 68.55.Jk – Structure and morphology; thickness
© EDP Sciences, 1997
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