Volume 41, Number 3, february I 1998
|Page(s)||327 - 332|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 December 2003|
Current flow past an etched barrier: field emission from a two-dimensional electron gas
Department of Physics, University of California and
Materials Sciences Division, Lawrence Berkeley
National Laboratory, Berkeley, CA 94720, USA
2 Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, UK
Accepted: 8 December 1997
We find that, under appropriate conditions, electrons can pass a barrier etched across a two-dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, consistent with a heating instability occurring in the second 2DEG. These results may explain similar behaviour recently seen in a number of front-gated devices by several groups.
PACS: 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions / 79.70.+q – Field emission, ionization, evaporation, and desorption
© EDP Sciences, 1998
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