Volume 41, Number 4, february II 1998
|Page(s)||443 - 448|
|Section||Cross-disciplinary physics and related areas of science and technology|
|Published online||01 September 2002|
A simple model of epitaxial growth
Institut für Theoretische Physik, Julius-Maximilians-Universität Würzburg Am Hubland,
D-97074 Würzburg, Germany
Accepted: 5 January 1998
A discrete solid-on-solid model of epitaxial growth is introduced which, in a simple manner, takes into account the effect of an Ehrlich-Schwoebel barrier at step edges as well as the local relaxation of incoming particles. Furthermore, a fast step edge diffusion is included in 2+1 dimensions. The model exhibits the formation of pyramid-like structures with a well-defined constant inclination angle. Two regimes can be clearly distinguished: in an initial phase (I) a definite slope is selected while the number of pyramids remains unchanged. Then a coarsening process (II) is observed which decreases the number of islands according to a power law in time. Simulations support self-affine scaling of the growing surface in both regimes. The roughness exponent is in all cases. For growth in 1+1 dimensions we obtain dynamic exponents z = 2 (I) and z = 3 (II). Simulations for d=2 seem to be consistent with z= 2 (I) and z= 2.3 (II), respectively.
PACS: 81.10.Aj – Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation / 05.70.Ln – Nonequilibrium thermodynamics, irreversible processes / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 1998
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.