Issue |
Europhys. Lett.
Volume 41, Number 4, february II 1998
|
|
---|---|---|
Page(s) | 443 - 448 | |
Section | Cross-disciplinary physics and related areas of science and technology | |
DOI | https://doi.org/10.1209/epl/i1998-00171-0 | |
Published online | 01 September 2002 |
A simple model of epitaxial growth
Institut für Theoretische Physik, Julius-Maximilians-Universität Würzburg Am Hubland,
D-97074 Würzburg, Germany
Received:
28
August
1997
Accepted:
5
January
1998
A discrete solid-on-solid model of epitaxial growth
is introduced which, in a simple manner, takes into account the
effect of an Ehrlich-Schwoebel barrier at step edges as well as the
local relaxation of incoming particles. Furthermore, a fast step edge
diffusion is included in 2+1 dimensions. The model exhibits the
formation of pyramid-like structures with a well-defined constant
inclination angle. Two regimes can be clearly distinguished: in an initial phase (I)
a definite slope is selected while the number of pyramids remains unchanged.
Then a coarsening process (II) is observed
which decreases the number of islands according to a power law in time.
Simulations support self-affine scaling of the growing surface in both regimes.
The roughness exponent is in all cases. For growth in
1+1 dimensions we obtain dynamic exponents z = 2 (I) and z = 3 (II).
Simulations for d=2 seem to be consistent with z= 2 (I) and
z= 2.3 (II), respectively.
PACS: 81.10.Aj – Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation / 05.70.Ln – Nonequilibrium thermodynamics, irreversible processes / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 1998
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