Influence of random potential fluctuations on the interwell radiative recombination in biased double quantum well

V. B. Timofeev; A. I. Filin; A. V. Larionov; J. Zeman; G. Martinez; J. M. Hvam; D. Birkedal; C. B. Sørensen

doi:10.1209/epl/i1998-00187-x

All issues

Volume 41 / No 5 (March I 1998)

Europhys. Lett., 41 5 (1998) 535-540

Abstract

Issue		Europhys. Lett. Volume 41, Number 5, March I 1998


Page(s)		535 - 540
Section		Condensed matter: electronic structure, electrical, magnetic and optical properties
DOI		https://doi.org/10.1209/epl/i1998-00187-x
Published online		01 September 2002

Europhys. Lett., 41 (5), pp. 535-540 (1998)

Influence of random potential fluctuations on the interwell radiative recombination in biased double quantum well

V. B. Timofeev¹, A. I. Filin¹, A. V. Larionov¹, J. Zeman², G. Martinez², J. M. Hvam³, D. Birkedal³ and C. B. Sørensen³

¹ Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia
² Grenoble High Magnetic Field Laboratory, MPI-FKF and CNRS, 25 Av. des Martyrs, 38042 Grenoble Cedex 9, France
³ Microelektronik Centret, The Technical University of Denmark, DK 2800 Lyngby, Denmark

Received: 8 September 1997
Accepted: 13 January 1998

Abstract

A systematic study of the photoluminescence from double quantum well in p-i-n GaAs/AlGaAs/GaAs heterostructure under the influence of an external electric and magnetic field at different temperatures has been performed. The luminescence peak of the indirect recombination exhibits a dynamical narrowing when increasing the temperature from 10 to 20 K. This is explained by thermal delocalization of electrons and holes localized in the wells at low temperatures due to the random potential fluctuations. This explanation is supported by time-resolved photoluminescence measurements of the different components of the spectra.

PACS: 73.20.Dx – Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers) / 73.20.Fz – Weak localization effects (e.g., quantized states) / 78.55.Cr – III-V semiconductors

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