Volume 41, Number 5, March I 1998
|Page(s)||535 - 540|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Influence of random potential fluctuations on the interwell radiative recombination in biased double quantum well
Institute of Solid State Physics, Russian Academy of Sciences,
142432 Chernogolovka, Russia
2 Grenoble High Magnetic Field Laboratory, MPI-FKF and CNRS, 25 Av. des Martyrs, 38042 Grenoble Cedex 9, France
3 Microelektronik Centret, The Technical University of Denmark, DK 2800 Lyngby, Denmark
Accepted: 13 January 1998
A systematic study of the photoluminescence from double quantum well in p-i-n GaAs/AlGaAs/GaAs heterostructure under the influence of an external electric and magnetic field at different temperatures has been performed. The luminescence peak of the indirect recombination exhibits a dynamical narrowing when increasing the temperature from 10 to 20 K. This is explained by thermal delocalization of electrons and holes localized in the wells at low temperatures due to the random potential fluctuations. This explanation is supported by time-resolved photoluminescence measurements of the different components of the spectra.
PACS: 73.20.Dx – Electron states in low-dimensional structures (superlattices, quantum well structures and multilayers) / 73.20.Fz – Weak localization effects (e.g., quantized states) / 78.55.Cr – III-V semiconductors
© EDP Sciences, 1998
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