Issue |
Europhys. Lett.
Volume 41, Number 5, March I 1998
|
|
---|---|---|
Page(s) | 565 - 570 | |
Section | Condensed matter: electronic structure, electrical, magnetic and optical properties | |
DOI | https://doi.org/10.1209/epl/i1998-00192-1 | |
Published online | 01 September 2002 |
Photoemission study of the Kondo insulator Bi4Pt3
1
Institut de Physique, Université de Neuchâtel,
CH-2000 Neuchâtel, Switzerland
2
Department of Physics, Tohoku University, Sendai 980-77,
Japan
3
Faculty of Science, Hiroshima University,
Higashi-Hiroshima 739, Japan
Received:
1
September
1997
Accepted:
15
January
1998
The electronic structure of the Kondo insulator has been studied by high-resolution photoelectron spectroscopy. Indications of the unusual electronic structure are observed: the 4f derived peak near the Fermi level is located at a binding energy of 20 meV and is not cut-off by the Fermi edge as in conventional Kondo systems; for low photon energies, where the 4f contribution is negligible and the conduction band states are probed, a loss of spectral intensity in the same energy range is observed. These observations are related to the opening of a gap at low temperature, confirming the picture that hybridisation between a localised 4f state and the conduction band is responsible for the insulating character of this material.
PACS: 79.60.Bm – Clean metal, semiconductor, and insulator surfaces / 71.28.+d – Narrow-band systems; intermediate-valence solids
© EDP Sciences, 1998
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