Volume 41, Number 5, March I 1998
|Page(s)||565 - 570|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Photoemission study of the Kondo insulator Bi4Pt3
Institut de Physique, Université de Neuchâtel,
CH-2000 Neuchâtel, Switzerland
2 Department of Physics, Tohoku University, Sendai 980-77, Japan
3 Faculty of Science, Hiroshima University, Higashi-Hiroshima 739, Japan
Accepted: 15 January 1998
The electronic structure of the Kondo insulator has been studied by high-resolution photoelectron spectroscopy. Indications of the unusual electronic structure are observed: the 4f derived peak near the Fermi level is located at a binding energy of 20 meV and is not cut-off by the Fermi edge as in conventional Kondo systems; for low photon energies, where the 4f contribution is negligible and the conduction band states are probed, a loss of spectral intensity in the same energy range is observed. These observations are related to the opening of a gap at low temperature, confirming the picture that hybridisation between a localised 4f state and the conduction band is responsible for the insulating character of this material.
PACS: 79.60.Bm – Clean metal, semiconductor, and insulator surfaces / 71.28.+d – Narrow-band systems; intermediate-valence solids
© EDP Sciences, 1998
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